dc.contributor.author | Takhtamirov, E. | |
dc.contributor.author | Melnik, R. | |
dc.date.accessioned | 2017-02-21T08:16:50Z | |
dc.date.available | 2017-02-21T08:16:50Z | |
dc.date.issued | 2010-12-31 | |
dc.identifier.issn | 1367-2630 | |
dc.identifier.uri | http://hdl.handle.net/20.500.11824/454 | |
dc.description.abstract | The structural inversion asymmetry-induced spin-orbit interaction of conduction band electrons in zinc-blende and wurtzite semiconductor structures is analysed allowing for a three-dimensional (3D) character of the external electric field and variation of the chemical composition. The interaction, taking into account all remote bands perturbatively, is presented with two contributions: a heterointerface term and a term caused by the external electric field. They have generally comparable strength and can be written in a unified manner only for 2D systems, where they can partially cancel each other. For quantum wires and dots composed of wurtzite semiconductors, new terms appear, absent in zinc-blende structures, which acquire the standard Rashba form in 2D systems. | |
dc.format | application/pdf | |
dc.language.iso | eng | en_US |
dc.rights | Reconocimiento-NoComercial-CompartirIgual 3.0 España | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/3.0/es/ | en_US |
dc.title | Spin-orbit interaction in three-dimensionally bounded semiconductor nanostructures | |
dc.type | info:eu-repo/semantics/article | en_US |
dc.identifier.doi | 10.1088/1367-2630/12/12/123006 | |
dc.relation.publisherversion | https://www.scopus.com/inward/record.uri?eid=2-s2.0-78650134598&doi=10.1088%2f1367-2630%2f12%2f12%2f123006&partnerID=40&md5=656be1f381f2719d1b0a2808c9e1f3c2 | |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | en_US |
dc.type.hasVersion | info:eu-repo/semantics/publishedVersion | en_US |
dc.journal.title | New Journal of Physics | en_US |