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dc.contributor.authorTakhtamirov E.
dc.contributor.authorMelnik R.
dc.date.accessioned2017-02-21T08:16:50Z
dc.date.available2017-02-21T08:16:50Z
dc.date.issued2010-12-31
dc.identifier.issn1367-2630
dc.identifier.urihttp://hdl.handle.net/20.500.11824/454
dc.description.abstractThe structural inversion asymmetry-induced spin-orbit interaction of conduction band electrons in zinc-blende and wurtzite semiconductor structures is analysed allowing for a three-dimensional (3D) character of the external electric field and variation of the chemical composition. The interaction, taking into account all remote bands perturbatively, is presented with two contributions: a heterointerface term and a term caused by the external electric field. They have generally comparable strength and can be written in a unified manner only for 2D systems, where they can partially cancel each other. For quantum wires and dots composed of wurtzite semiconductors, new terms appear, absent in zinc-blende structures, which acquire the standard Rashba form in 2D systems. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
dc.formatapplication/pdf
dc.languageeng
dc.publisherNew Journal of Physics
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/es/
dc.titleSpin-orbit interaction in three-dimensionally bounded semiconductor nanostructures
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion
dc.identifier.doi10.1088/1367-2630/12/12/123006
dc.relation.publisherversionhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-78650134598&doi=10.1088%2f1367-2630%2f12%2f12%2f123006&partnerID=40&md5=656be1f381f2719d1b0a2808c9e1f3c2


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