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dc.contributor.authorPrabhakar, S.
dc.contributor.authorMelnik, R.
dc.contributor.authorPatil, S.
dc.date.accessioned2017-02-21T08:16:50Z
dc.date.available2017-02-21T08:16:50Z
dc.date.issued2010-12-31
dc.identifier.issn1742-6588
dc.identifier.urihttp://hdl.handle.net/20.500.11824/457
dc.description.abstractIn a series of recent papers we demonstrated that coupled electro-mechanical effects can lead to pronounced contributions in band structure calculations of low dimensional semiconductor nanostructures (LDSNs) such as quantum dots, wires, and even wells. Some such effects are essentially nonlinear. Both strain and piezoelectric effects have been used as tuning parameters for the optical response of LDSNs in photonics, band gap engineering and other applications. However, these effects have been largely neglected in literature while laterally coupled quantum dots (QDs) have been studied. The superposition of electron wave functions in these QDs become important in the design of optoelectronic devices as well in tayloring properties of QDs in other applications areas. At the same time, laterally grown QDs coupled with electric and mechanical fields are becoming increasingly important in many applications of LDSN-based systems, in particular where the tunneling of electron wave function through wetting layer (WL) becomes important and the distance between the dots is treated as a tuning parameter. Indeed, as electric and elastic effects are often significant in LDSNs, it is reasonable to expect that the separation between the QDs may also be used as a tuning parameter in the application of logic devices, for example, OR gates, AND gates and others. In this contribution, by using the fully coupled model of electroelasticity, we build on our previous results while analyzing the influence of these effects on optoelectronic properties of QDs. Results are reported for III-V type semiconductors with a major focus given to GaN/AlN based QD systems.
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dc.language.isoengen_US
dc.rightsReconocimiento-NoComercial-CompartirIgual 3.0 Españaen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/es/en_US
dc.titleBand structures of laterally coupled quantum dots, accounting for electromechanical effects
dc.typeinfo:eu-repo/semantics/conferenceObjecten_US
dc.identifier.doi10.1088/1742-6596/245/1/012014
dc.relation.publisherversionhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-78651239050&doi=10.1088%2f1742-6596%2f245%2f1%2f012014&partnerID=40&md5=c918e1d336d8c87123d8b76c32a9ceb6
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessen_US
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersionen_US
dc.journal.titleJournal of Physics: Conference Seriesen_US


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Reconocimiento-NoComercial-CompartirIgual 3.0 España
Except where otherwise noted, this item's license is described as Reconocimiento-NoComercial-CompartirIgual 3.0 España